1N5822 Schottky Barrier Diode

Description

The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. Mechanical Characteristics:- Case: Epoxy, Molded Weight: 1.1 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260degC Max. for 10 Seconds Polarity: Cathode indicated by Polarity Band Specification:- SymbolParameterValueUnits VRRMPeak Repetitive Reverse Voltage40V VRWMWorking Peak Reverse Voltage40V VRDC Blocking Voltage40V VR(RMS)RMS Reverse Voltage28V VRSMNon?Repetitive Peak Reverse Voltage48V IOAverage Rectified Output Current3A IFSMNon-Repetitive Peak Forward Surge Current80A TJOperating Junction Temperature Range? 65 to +125degC TstgStorage Temperature Range? 65 to +125degC