1N5819-40V 1A Schottky Barrier Diode

The IN5819 series employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low?voltage, high?frequency inverters, free wheeling diodes, and polarity protection diodes. The 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Mechanical Characteristics:- Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260degC Max for 10 Seconds Polarity: Cathode Indicated by Polarity Band ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) Specification:- SymbolParameterValueUnits VRRMPeak Repetitive Reverse Voltage40V VRWMWorking Peak Reverse Voltage40V VRDC Blocking Voltage40V VR(RMS)RMS Reverse Voltage28V VRSMNon?Repetitive Peak Reverse Voltage48V IOAverage Rectified Output Current1A IFSMNon-Repetitive Peak Forward Surge Current25A TJOperating Junction Temperature Range? 65 to +125degC TstgStorage Temperature Range? 65 to +150degC