2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Detailed Specifications:- Number of Channels1 Channel Transistor PolarityN-Channel Drain-Source Breakdown Voltage (Vds)60V Continuous Drain Current (Id)200mA Drain-Source Resistance (Rds On)5Ohms Gate-Source Voltage (Vgs)20V ConfigurationSingle Operating Temperature Range-55 - 150degC Power Dissipation (Pd)400mW